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Particle-based ensemble semi-classical Monte Carlo (MC) methods employquantum corrections (QCs) to address quantum confinement and degenerate carrierpopulations to model tomorrow's ultra-scaled MOSFETs. Here we present newapproaches to quantum confinement and carrier degeneracy effects in athree-dimensional (3D) MC device simulator, and illustrate their significancethrough simulation of n-channel Si and III-V FinFETs. Original contributionsinclude our treatment of far-from-equilibrium degenerate statistics andQC-based modeling of surface-roughness scattering, as well as consideringquantum-confined phonon and impurity scattering in 3D. Typical MC simulationsapproximate degenerate carrier populations as Fermi distributions to model thePauli-blocking (PB) of scattering to occupied final states. To allow forincreasingly far-from-equilibrium non-Fermi carrier distributions inultra-scaled devices, we instead generate the final-state occupationprobabilities used for PB by sampling the local carrier populations as afunction of energy and energy valley. This process is aided by the use offractional carriers or sub-carriers, which minimizes classical carrier-carrierscattering. Quantum confinement effects are addressed throughquantum-correction potentials (QCPs) generated from Schr\"{o}dinger-Poissonsolvers, as commonly done. However, we use our valley- andorientation-dependent QCPs not just to redistribute carriers in real space, oreven among energy valleys, but also to calculate confinement-dependent phonon,impurity, and surface-roughness scattering rates. FinFET simulations are usedto illustrate how, collectively, these quantum effects can substantially reduceand even eliminate otherwise expected benefits ofIn$_{\text{0.53}}$Ga$_{\text{0.47}}$As FinFETs over otherwise identical SiFinFETs, despite higher thermal velocities inIn$_{\text{0.53}}$Ga$_{\text{0.47}}$As.

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering