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Spin Hall effect (SHE) induced reversal of perpendicular magnetization hasattracted significant interest, due to its potential to lead to low powermemory and logic devices. However, the switching requires an assisted in-planemagnetic field, which hampers its practical applications. Here, we introduce anovel approach for external-field-free spin Hall switching of a perpendicularnanomagnet by utilizing a local dipolar field arising from an adjacent in-planemagnetic layer. Robust switching of perpendicular CoFeB nanopillars in adipole-coupled composite stack is experimentally demonstrated in the absence ofany external magnetic field, in consistent with the results of micromagneticsimulation. Large in-plane compensation field of about 135 Oe and out-of-planeloop shift of about 45 Oe / 10 7 A cm-2 are obtained in the nanopillar deviceswith composite structure. By performing micromagnetic simulations, we confirmthe composite external-field-free switching strategy can also work for a 10 x10 nm2 circular pillar. Compared with other proposed methods forexternal-field-free spin Hall switching of perpendicular magnetization, thedipole-coupled composite structure is compatible with a wide range of spin Hallsystems and perpendicular magnetic tunnel junctions, paving the way towardspractical SHE-based MRAM and logic applications.

External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure