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Combined with magnetotransport measurements and first-principlescalculations, we systematically investigated the effects of Bi incorporation onthe electrical properties of the undoped InP1-xBix epilayers with 0<x<2.41%.The Hall-bar measurements reveal a dominant n-type conductivity of the InPBisamples. The electron concentrations are found to decrease firstly as xincreases up to x=1.83%, and then increase again with further increasing Bicomposition, whiles the electron mobility shows an inverse variation to theelectron concentration. First-principle calculations suggest that both thephosphorus antisites and vacancy defects are the dominant donors responsiblefor the high electron concentration. And their defect concentrations showdifferent behaviors as Bi composition x increases, resulting in a nonlinearrelationship between electron concentration and Bi composition in InPBi alloys.

The identification of the dominant donors in low temperature grown InPBi materials