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The present study elucidates the correlation between the structural andoptical properties of GaN nanowires grown on Si(111) substrate by plasmaassisted molecular beam epitaxy (PA-MBE) technique under various growthconditions. GaN NWs exhibiting different shapes, sizes and distribution weregrown at various substrate temperatures with same Ga-N (III-V) ratio of 0.4. Weobserve that sample grown at lower substrate temperature (~700 degC) results2-dimensional island like structure with almost very little (~30%) circularitywhile increasing substrate temperature (>770 degC) leads to growth ofindividual GaN NW (>80% circularity) with excellent structural properties. Thetemperature dependent photoluminescence measurement together with analysis ofRAMAN active modes provides legitimate evidences of strong correlation betweenthe structure and optical properties GaN nanowires grown on Si substrates.

Comprehensive investigation on the correlation of growth, structural and  optical properties of GaN nanowires grown on Si(111) substrates by plasma  assisted molecular beam epitaxy technique