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Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffractionwere used to measure accurately the full strain tensor and the latticeorientation distribution at the sub-micron scale in highly strained, suspendedGe micro-devices. A numerical approach to obtain the full strain tensor fromthe deviatoric strain measurement alone is also demonstrated and used forfaster full strain mapping. We performed the measurements in a series ofmicro-devices under either uniaxial or biaxial stress and found an excellentagreement with numerical simulations. This shows the superior potential of Lauemicro-diffraction for the investigation of highly strained micro-devices.

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering