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Silicon spintronics requires injection of spin-polarized carriers into Si. Anemerging approach is direct electrical injection from a ferromagneticsemiconductor - EuO being the prime choice. Functionality of the EuO/Si spincontact is determined by the interface band alignment. In particular, the bandoffset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES toprobe the electronic structure of the buried EuO/Si interface with momentumresolution and chemical specificity. The band structure reveals a conductionband offset of 1.0 eV attesting the technological potential of the EuO/Sisystem.

Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics