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The compound Bi14Rh3I9 consists of ionic stacks of intermetallic[(Bi4Rh)3I]2+ and insulating [Bi2I8]2- layers and has been identified to be aweak topological insulator. Scanning tunneling microscopy revealed the robustedge states at all step edges of the cationic layer as a topologicalfingerprint. However, these edge states are found 0.25 eV below the Fermi levelwhich is an obstacle for transport experiments. Here, we address this obstacleby comparing results of density functional slab calculations with scanningtunneling spectroscopy and angle-resolved photoemission spectroscopy. We showthat the n-type doping of the intermetallic layer is intrinsically caused bythe polar surface and is well screened towards the bulk. In contrast, theanionic "spacer" layer shows a gap at the Fermi level, both, on the surface andin the bulk, i.e. it is not surface-doped due to iodine desorption. The wellscreened surface dipole implies that a buried edge state, probably alreadybelow a single spacer layer, is located at the Fermi level. Consequently, amultilayer step covered by a spacer layer could provide access to the transportproperties of the topological edge states. In addition, we find a lateralelectronic modulation of the topologically non-trivial surface layer which istraced back to the coupling with the underlying zigzag chain structure of thespacer layer.

Electronic Structure of the Dark Surface of the Weak Topological Insulator Bi14Rh3I9