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Several equations used to model and characterize the linear region IVcharacteristics of nanoscale field-effect transistors are derived. The meaningof carrier mobility at the nanoscale is discussed by defining two relatedquantities, the apparent mobility and the ballistic mobility. The validity ofMatthiessen's Rule for relating the apparent ability to the ballistic anddiffusive mobilities is examined. Other questions that arise in the analysisand characterization of nanoscale field-effect transistors are also discussed.These notes are intended to pull together in one place some key equationsneeded to analyze the linear region performance of nanoscale MOSFETs and topoint out some errors in previous publications.

Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear Region