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Using in-situ Raman scattering from phosphorene channel in anelectrochemically top-gated field effect transistor, we show that its phononswith A$_g$ symmetry depend much more strongly on concentration of electronsthan that of holes, while the phonons with B$_g$ symmetry are insensitive todoping. With first-principles theoretical analysis, we show that the observedelecton-hole asymmetry arises from the radically different constitution of itsconduction and valence bands involving $\pi$ and $\sigma$ bonding statesrespectively, whose symmetry permits coupling with only the phonons thatpreserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive toolfor measuring electron concentration in phosphorene-based nanoelectronicdevices.

Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor