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Two-dimensional black phosphorus has been configured as field-effecttransistors, showing an intrinsic symmetric ambipolar transport characteristic.Here, we demonstrate the strongly modulated ambipolar characteristics offew-layer black phosphorus in oxygen. Pure oxygen exposure can dramaticallydecrease the electron mobility of black phosphorus without degrading the holetransport. The transport characteristics can be nearly recovered upon annealingin Argon. This reveals that oxygen molecules are physisorbed on blackphosphorus. In contrast, oxygen exposure upon light illumination exhibits asignificant attenuation for both electron and hole transport, originating fromthe photoactivated oxidation of black phosphorus, which is corroborated by insitu X-ray photoelectron spectroscopy characterization. Our findings clarifythe predominant role of oxygen in modulating ambipolar characteristics of blackphosphorus, thereby providing deeper insight to the design of black phosphorusbased complementary electronics.

Strongly Modulated Ambipolar Characteristics of Few-layer Black Phosphorus in Oxygen