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Epitaxy of semiconductors is a process of tremendous importance in appliedscience and optoelectronic industry. Controlling of defects introduced duringepitaxial growth is a key point in manufacturing devices of high efficiency anddurability. In this work, we demonstrate how useful hybrid reflections are onthe study of epitaxial structures with anisotropic strain gradients due topatterned substrates. High accuracy to detect and distinguish elastic andplastic relaxations are one of the greatest advantages of measuring this typeof reflection, as well as the fact that it can be exploited in symmetricalreflection geometry on a commercial high-resolution diffractometer.

Hybrid reciprocal lattice: application to layer stress appointment in GaAlN/GaN(0001) systems with patterned substrates