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IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grownon SrF2 substrates by molecular beam epitaxy. In site reflection high-energyelectron diffraction shows a streaky pattern with sixfold symmetry in the planefor the Ge1-xCrxTe layer, implying an epitaxial growth of Ge1-xCrxTe [111]/SrF2[111]. A clear hysteresis loop is observed in the anomalous Hall effectmeasurements due to the strong spin-orbit interaction in the host GeTe. TheCurie temperature increases with increasing Cr composition up to 200 K, butthere is no clear dependence of the Curie temperature on the holeconcentration, implying that the mechanism of the ferromagnetic interactionamong Cr ions is different from Mn doped diluted magnetic semiconductors.

Epitaxial growth of diluted magnetic semiconductor Ge1-xCrxTe with high Cr composition