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We report on magneto-transport measurements on low-density, large-areamonolayer epitaxial graphene devices grown on SiC. We show that the zero-energyLandau level (LL) in monolayer graphene, which is predicted to be magneticfield ($B$)-independent, can float up above the Fermi energy at low $B$. Thisis supported by the temperature ($T$)-driven flow diagram approximated by thesemi-circle law as well as the $T$-independent point in the Hall conductivity$\sigma_{xy}$ near $e^2/h$. Our experimental data are in sharp contrast toconventional understanding of the zeroth LL and metallic-like behavior inpristine graphene prepared by mechanical exfoliation at low $T$. Thissurprising result can be ascribed to substrate-induced sublattice symmetrybreaking which splits the degeneracy of the zeroth Landau level. Our findingprovides a unified picture regarding the metallic behavior in pristine grapheneprepared by mechanical exfoliation, and the insulating behavior and theinsulator-quantum Hall transition in monolayer epitaxial graphene.

Floating up of the zero-energy Landau level in monolayer epitaxial graphene