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The reactive growth of cobalt germanide on Ge(001) was investigated by meansof in-situ x-ray absorption spectroscopy photoemission electron microscopy(XAS-PEEM), micro-illumination low-energy electron diffraction ($\mu$-LEED),and ex-situ atomic force microscopy (AFM). At a Co deposition temperature of670{\deg}C, a rich morphology with different island shapes and dimensions isobserved, and a correlation between island morphology and stoichiometry isfound. Combining XAS-PEEM and $\mu$-LEED, we were able to identify a large partof the islands to consist of CoGe$_2$, with many of them having an unusualepitaxial relationship: CoGe$_2$[$\bar110$](111) $\parallel$Ge[$\bar110$](001). Side facets with (112) and (113) orientation have beenfound for such islands. However, two additional phases were observed, mostlikely Co$_5$Ge$_7$ and CoGe. The occurrence of these intermediate phases ispromoted by defects, as revealed by comparing growth on Ge(001) single crystalsand on Ge(001)/Si(001) epilayer substrates.

Morphology and chemical composition of cobalt germanide islands on  Ge(001): in-situ nanoscale insights into contact formation for Ge-based  device technology