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In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533]related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, andZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitativelyand the most important scattering parameters for controlling electronconcentration and electron mobility were obtained. Treatment of intrinsicmechanisms included polar-optical phonon scattering, piezoelectric scatteringand acoustic deformation potential scattering. For extrinsic mechanisms,ionized impurity, dislocation scattering, and strain-induced fields wereincluded. For bulk ZnO, the reported experimental data were corrected forremoving the effects of a degenerate layer at the ZnO/sapphire interface via atwo layer Hall effect model. Also, donor density, acceptor density and donoractivation energy were determined via the charge balance equation. This sampleexhibited hopping conduction below 50K and dislocation scattering closelycontrolled electron mobility closely. The obtained results indicated that theenhancement of electron mobility in double sample, compared with the singleone, can be attributed to the reduction of dislocation density, two dimensionalimpurity density in the potential well due to background impurities, and/orinterface charge and strain-induced fields, which can be related to betterelectron confinement in the channel and enhancement in the sheet carrierconcentration of 2DEG in this sample.

Electrical Transport Properties in ZnO Bulk, c/ZnO and ZnMgO/ZnO/ZnMgO Heterostructures