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Oxygen vacancy is intrinsically coupled with magnetic, electronic andtransport properties of transition-metal oxide materials and directlydetermines their multifunctionality. Here, we demonstrate reversible control ofoxygen content by post-annealing at temperature lower than 300 degreecentigrade and realize the reversible metal-insulator transition in epitaxialNdNiO3 films. Importantly, over six orders of magnitude in the resistancemodulation and a large change in optical band gap are demonstrated at roomtemperature without destroying the parent framework and changing the p-typeconductive mechanism. Further study revealed that oxygen vacancies stabilizedthe insulating phase at room temperature is universal for perovskite nickelatesfilms. Acting as electron donors, oxygen vacancies not only stabilize theinsulating phase at room temperature, but also induce a large magnetization of~50 emu/cm3 due to the formation of strongly correlated Ni2+ t2g6eg2 states.The band gap opening is an order of magnitude larger than that of the thermallydriven metal-insulator transition and continuously tunable. Potentialapplication of the newly found insulating phase in photovoltaics has beendemonstrated in the nickelates-based heterojunctions. Our discovery opens upnew possibilities for strongly correlated perovskite nickelates.

Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics