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Spin defects in wide-band gap semiconductors are promising systems for therealization of quantum bits, or qubits, in solid-state environments. To date,defect qubits have only been realized in materials with strong covalent bonds.Here, we introduce a strain-driven scheme to rationally design defect spins infunctional ionic crystals, which may operate as potential qubits. Inparticular, using a combination of state-of-the-art ab-initio calculationsbased on hybrid density functional and many-body perturbation theory, wepredicted that the negatively charged nitrogen vacancy center in piezoelectricaluminum nitride exhibits spin-triplet ground states under realistic uni- andbi-axial strain conditions; such states may be harnessed for the realization ofqubits. The strain-driven strategy adopted here can be readily extended to awide range of point defects in other wide-band gap semiconductors, paving theway to controlling the spin properties of defects in ionic systems forpotential spintronic technologies.

Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies