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Here we repair the single-layer MoSe2 field-effect transistors by the EDTAprocessing, after which the devices' room-temperature carrier mobilityincreases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by thecombined study of the first-principle calculation, aberration-correctedtransmission electron microscopy and Raman spectroscopy. Single/double Sevacancies are revealed originally, which cause some mid-gap impurity states andlocalize the device carriers. They are found repaired with the result ofimproved electronic transport. Such a picture is confirmed by a 1.5cm-1 redshift in the Raman spectra.

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics