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The optical emission of non-polar GaN/AlN quantum dots has been investigated.The presence of stacking faults inside these quantum dots is evidenced in thedependence of the photoluminescence with temperature and excitation power. Atheoretical model for the electronic structure and optical properties ofnon-polar quantum dots, taking into account their realistic shapes, ispresented which predicts a substantial reduction of the internal electric fieldbut a persisting quantum confined Stark effect, comparable to that of polarGaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking faultinside the quantum dot, which acts as zinc-blende inclusion into the wurtzitematrix, results in an additional 30 % reduction of the internal electric fieldand gives a better account of the observed optical features.

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar  planes: the effect of stacking faults in the reduction of the internal  electric field