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Metal contacts are fundamental building components for graphene basedelectronic devices and their properties are greatly influenced by interfacequality during device fabrication, leading to resistance variation. Here weshow that nickel graphene junction degrades after air exposure, due tointerfacial oxidation, thus creating a tunneling barrier. Most importantly, wedemonstrate that hydrogen annealing at moderate temperature (300 0C) is aneffective technique to reverse the degradation.

Reverse degradation of nickel graphene junction by hydrogen annealing