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Current voltage and Kelvin Probe Force Microscopy (KPFM) measurements wereperformed on single ZnO nanowires. Measurements are shown to be stronglycorrelated with the contact behavior, either ohmic or Schottky. The ZnOnanowires were obtained by metallo-organic chemical vapor deposition (MOCVD)and contacted using electronic-beam lithography. Depending on the contactgeometry, good quality ohmic contacts (linear I V behavior) or non-linear(diode like) Schottky contacts were obtained. Current voltage and KPFMmeasurements on both types of contacted ZnO nanowires were performed in orderto investigate their behavior. A clear correlation could be established betweenthe I V curve, the electrical potential profile along the device and thenanowire geometry. Some arguments supporting this behavior are given based on adepleted region extension. This work will help to better understand theelectrical behavior of ohmic contacts on single ZnO nanowires, for futureapplications in nanoscale field effect-transistors and nano-photodetectors.

Characterisations of ohmic and Schottky contacts of a single ZnO nanowire