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This paper projects the enhanced drive current of a n-type electrostaticallydoped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction andband-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFETdevice utilizes the electrostatic doping in order to create the source/drainregion on an intrinsic silicon nanowire that also felicitates dynamicre-configurability. The ED-TFET offers good electrostatic control over thechannel with reduced thermal budget and process complexity. However, deviceexhibits low ON current, therefore, in this work, we elaborate on interfacingof group III-V with group IV semiconductors for heterojunction. Incorporationof heterojunction and band gap engineering in the ED-TFET has improved drivecurrent even at very low operating voltage. The comparison of various low bandgap source region materials shows that germanium (Ge) source (Si-Si-Ge) ED-TFETprovides steepest subthreshold swing (SS) of about 9.5 mV/dec, and higherON-state drive current of 1.58 mA at $V_{DS}$ = 1 V and 0.093 mA at $V_{DS}$ =0.5 V with same SS.

Electrostatically Doped Heterojunction TFET with Enhanced Driving Capabilities for Low Power Applications