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We report the effects of electron doping on the crystal structure andelectrical resistivity of LaOBiS$_{2-x}$F$_x$ (0.05 $\leq$ $x$ $\leq$ 0.2). The$ab$ plane is found to be relatively insensitive to the amount of F, whereasthe $c$ axis shrinks continuously with increasing $x$, suggesting that thedoped F atoms substitute selectively into the apical sites in the BiS$_2$layer. At $x$ = 0.10, as the temperature is decreased from room temperature,the electrical resistivity is temperature-independent from room temperature to285 K, increases linearly with decreasing temperature from 285 K to 205 K andthen shows obvious insulating behavior below 205 K, which may be due to strongspin-orbit coupling. LaOBiS$_{1.9}$F$_{0.1}$ shows the significantly weak andtemperature-independent diamagnetism without any evident anomalies caused by aphase transition.

Observation of spin-orbit insulator-like behavior in LaOBiS$_{2-x}$F$_x$ (0.05 $\leq$ $x$ $\leq$ 0.2)