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A strong coupling between the electron spin and its motion is one of theprerequisites of spin-based data storage and electronics. A major obstacle isto find spin-orbit coupled materials where the electron spin can be probed andmanipulated on macroscopic length scales, for instance across the gate channelof a spin-transistor. Here, we report on millimeter-scale edge channels with aconductance quantized at a single quantum 1 $\times$ $e^2/h$ at zero magneticfield. The quantum transport is found at the lateral edges of three-dimensionaltopological insulators made of bismuth chalcogenides. The data are explained bya lateral, one-dimensional quantum confinement of non-topological surfacestates with a strong Rashba spin-orbit coupling. This edge transport can beswitched on and off by an electrostatic field-effect. Our results arefundamentally different from an edge transport in quantum spin Hall insulatorsand quantum anomalous Hall insula-tors.

Quantized one-dimensional edge channels with strong spin-orbit coupling in 3D topological insulators