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PbSe is a low-gap semiconductor with excellent infrared photo-detectionproperties. Here we report our high magnetic field and low temperatureelectrical properties measurement performed on a moderately doped PbSe singlecrystals with p-type bulk carrier density of around $1\times10^{18}$ cm$^{-3}$.Longitudinal resistance (R$_{xx}$) and Hall resistance (R$_{xy}$) weresimultaneously measured between 0 T--18 T at several temperatures between 0.8K--25 K. These transport measurements start showing oscillatory behavior aroundand above 6 T of magnetic field. The quantum oscillation frequency is ~15 T,giving an estimate for the carrier density of each L pocket in the BZparticipating in these oscillations. The effective mass of the free carriers isestimated from the temperature dependence of oscillation amplitudes.Measurements as the magnetic fields is rotated reveal the magneto-transportproperties of a 3D-like fermi surface. Free carrier scattering rate from thetransport data has been estimated which also gave an estimation of Dingletemperature in PbSe. Room temperature optical measurements has been conductedand other optical properties has been estimated. The Drude-Lorentz model fithas been performed which show a low frequency phonon mode around 45 cm$^{-1}$and bandgap of around 0.2 eV along with other interband electronic transitions.Some of the optical and transport results has been compared against othermembers of class IV-VI chalcogenides.

Study of magneto-transport properties and quantum oscillations in PbSe single crystals