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Here, we report the performance of vacancy affected supercell of a hybridGraphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFETat its ballistic transport limit using Non Equilibrium Green's Function (NEGF)methodology. A supercell is made of the 3p configuration of armchair nanoribbonthat is doped on the either side with 6 BN atoms and is also H-passivated. Thetype of vacancies studied are mono (B removal), di (B and N atom removal) andhole (removal of 6 atoms) formed all at the interface of carbon and BN atoms.Density Functional Theory (DFT) is employed to evaluate the material propertiesof this supercell like bandgap, effective mass and density of states (DOS).Further band gap and effective mass are utilized in self-consistentPoissonSchrodinger calculator formalized using NEGF approach. For all thevacancy defects, material properties show a decrease which is more significantfor hole defects. This observation is consistent in the device characteristicsas well where ON-current (ION ) and Sub Threshold Slope (SS) shows the maximumincrement for hole vacancy and increase is more significant becomes when thenumber of defects increase.

Analysis of Vacancy defects in Hybrid Graphene-Boron Nitride Armchair Nanoribbon based n-MOSFET at Ballistic Limit