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Of the new types of cryoelectronic devices under development, including phaseshifters, giant magnetoresistance switches, diodes, transistors, and memorycells, some are based on hybrid superconductor-normal metal orsuperconductor-ferromagnet films. Control of these devices is realized by meansof pulses of voltage, light, or magnetic field. Spin-polarized current may beused to switch low-temperature devices, as in spin-electronic devices. In thesuperconducting layer, the current is dissipation less, which would bring largereduction of energy consumption. We demonstrate that mag-netic domain walls inbilayer niobium-permalloy stripes are shifted by electrical current along thestripe even at low tem-perature, with the niobium in the superconducting state.The wall motion in response to current pulses is quite different from thatinduced by a magnetic field pulses only. The effect could be used to create anew type of sequentially switched serial devices because of very high value ofthe wall velocity, which excides by many orders of magnitude the velocity ofthe wall moved with magnetic field pulses.

Current and field stimulated motion of domain wall in narrow permalloy stripe