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Solid-phase epitaxial crystallization of amorphous Si layers on a crystallineSi substrate during B-ion irradiation is investigated over the temperaturerange 293 - 573 K. Regrowth occurs at all measured temperatures, withactivation energy 0.07 eV and prefactor 2.36 nm / 10^14 B cm-2 The lowactivation energy suggests that free interstitial point defects are involvedand the unusually large prefactor indicates that each interstitial crystallizesabout 50 host Si atoms. We propose that interstitial annihilation at the a/cinterface sets off a shock-like process that drives c-Si island nucleation andgrowth until terminated by misfit strain.

Avalanche effects in solid-phase epitaxial crystallization induced by light-ion irradiation