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Si/Ge uni-traveling carrier photodiodes exhibit higher output current whenspace-charge effects are overcome and thermal effects are suppressed, which ishighly beneficial for increasing the dynamic range of various microwavephotonic systems and simplifying high-bit-rate digital receivers in differentapplications. From the point of view of packaging, detectors withvertical-illumination configuration can be easily handled by pick-and-placetools and are a popular choice for making photo-receiver modules. However,vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer frominter-constraint between high speed and high responsivity. Here, we report ahigh responsivity vertical-illumination Si/Ge UTC photodiode based on asilicon-on-insulator substrate. The maximum absorption efficiency of thedevices was 2.4 times greater than the silicon substrate owing to constructiveinterference. The Si/Ge UTC photodiode was successfully fabricated and had adominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25%thinner Ge absorption layer.

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate