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A high threshold voltage enhancement-mode GaN HEMT with p-type doped bufferis discussed and simulated. Analytical expressions are derived to explain therole of buffer capacitance in designing and enhancing threshold voltage.Simulations of the proposed device with p-type buffer show threshold voltagesabove 5 V, and a positive shift in threshold voltage as the oxide capacitanceis reduced, thus enabling threshold voltage tunability over an unprecedentedrange for GaN-based HEMTs. The electric field profiles, breakdown performance,on-resistance and delay tradeoffs in the proposed pGaN back HEMT device arealso discussed.

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer