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Band edge and energy levels of truncated pyramidal In_x Ga_(1-x) As/GaAs(001) quantum dots are studied by single-band effective mass approach, and thedependence to stoichiometric percentages is investigated. It is shown thatenhancement of indium percentage decreases the band gap and the recombinationenergy of electrons and holes. Our principal result is that decrease ofrecombination energy and band gap is nonlinear and the slopes are differentband gap and e-h recombination energy. In addition, it is proved that straintensor is diagonal along z-axis and the absolute value of the components getslarger by more indium inclusion. Our results appear to be in very goodconsonance with similar studies.  Keywords: quantum dot, band structure, strain tensor, indium percentage.

Energy Level Engineering in In_x Ga_(1-x) As/GaAs Quantum Dots Applicable to QD-Lasers by Changing the Stoichiometric Percentage