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Quantum dot lasers have been the focus of researchers due to theirinteresting optical properties owing to quantum confinement of carriers. Inepitaxial quantum dots formed on a substrate, band-edge diagrams sound to morecomplex than simple bulk materials because of the important role of strain.Strain tensor is strongly dependent to lattice mismatch. Various substrateindexes have been used in the laser devices, and a number of research groupselaborate to find the best substrate index. In this research band edge, energylevels and strain effects of cubic In_0.4 Ga_0.6 As-GaAs quantum dots arestudied by 6-band k.p model and their dependence to substrate index isinvestigated. It is shown that change of substrate index affects the band gapand transition energy of electrons and holes. Moreover, we show that componentsof strain tensor are strongly sensitive to surface index, and symmetry breaksalong space. Our results appear to be in very good consonance with representedformula and similar researches.  Keywords: substrate index, quantum dot laser, band edge, strain tensor.

Substrate Index Dependence of Energy Levels in In_(0.4) Ga_(0.6) As/GaAs Quantum Dots Applicable to QD-Lasers (a six-band k.p approximation)