English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The nucleation mechanisms during solution deposition of organic semiconductorthin films determine the grain morphology and may influence the crystallinepacking in some cases. Here, in-situ optical spectromicroscopy in reflectionmode is used to study the growth mechanisms and thermal stability of6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show thatthe films form in a supersaturated state before transforming to a solid film.Molecular aggregates corresponding to subcritical nuclei in the crystallizationprocess are inferred from optical spectroscopy measurements of thesupersaturated region. Strain-free solid films exhibit a temperature-dependentblue shift of optical absorption peaks due to a continuous thermally drivenchange of the crystalline packing. As crystalline films are cooled to ambienttemperature they become strained although cracking of thicker films isobserved, which allows the strain to partially relax. Below a criticalthickness, cracking is not observed and grazing incidence X-ray diffractionmeasurements confirm that the thinnest films are constrained to the latticeconstants corresponding to the temperature at which they were deposited.Optical spectroscopy results show that the transition temperature between FormI (room temperature phase) and Form II (high temperature phase) depends on thefilm thickness, and that Form I can also be strain-stabilized up to135$^\circ$C.

Nucleation and strain-stabilization during organic semiconductor thin film deposition