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Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominentferrite by virtue of its piezoelectricity and ferrimagnetism, coupled withmagneto-electric effects. Herein, we unequivocally demonstrate a largeferroelectric remanent polarization in undoped o-GFO thin films by adoptingeither a hexagonal strontium titanate (STO) or a cubic yttrium-stabilizedzirconia (YSZ) substrate. The polarization-electric-field hysteresis curves ofthe polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the netswitching polarization of ~35 {\mu}C/cm2 with an unusually high coercive fieldof +-1400 kV/cm at room temperature. The PUND measurement also demonstrates theswitching polarization of ~26 {\mu}C/cm2. The activation energy for thepolarization switching, as obtained by density-functional theory calculations,is remarkably high, 1.05 eV per formula unit. This high value accounts for theobserved stability of the polar Pna21 phase over a wide range of temperature upto 1368 K.

Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films