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We report the growth of high-quality triangular GaN nanomesas, 30-nm thick,on the C-face of 4H-SiC using nano selective area growth (NSAG) with patternedepitaxial graphene grown on SiC as an embedded mask. NSAG alleviates theproblems of defective crystals in the heteroepitaxial growth of nitrides, andthe high mobility graphene film can readily provide the back low-dissipativeelectrode in GaN-based optoelectronic devices. The process consists in firstgrowing a 5-8 graphene layers film on the C-face of 4H- SiC byconfinement-controlled sublimation of silicon carbide. The graphene film isthen patterned and arrays of 75-nanometer-wide openings are etched in graphenerevealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown bymetal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfectselectivity on SiC, in openings patterned through graphene, with no nucleationon graphene. The up-or-down orientation of the mesas on SiC, their triangularfaceting, and cross-sectional scanning transmission electron microscopy showthat they are biphasic. The core is a zinc blende monocrystal surrounded withsingle-crystal hexagonal wurtzite. The GaN crystalline nanomesas have nothreading dislocations, and do not show any V-pit. This NSAG processpotentially leads to integration of high-quality III-nitrides on the waferscalable epitaxial graphene / silicon carbide platform.

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial  graphene as a mask: towards integrated III-nitride / graphene / SiC  electronics and optoelectronics