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In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTOstructures induced by a multi-mixed mechanism was studied. It was found thatthe devices could be reproducibly programmed into three nonvolatile resistancestates. And the directly switching between any resistance states was realized.This increases the operation speed and lowers the complexity of control circuitof multi-state nonvolatile memory.

Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures