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Atomically thin materials such as graphene and semiconducting transitionmetal dichalcogenides (TMDCs) have attracted extensive interest in recentyears, motivating investigation into multiple properties. In this work, wedemonstrate a refined version of the optothermal Raman technique to measure thethermal transport properties of two TMDC materials, MoS2 and MoSe2, insingle-layer (1L) and bi-layer (2L) forms. This new version incorporates twocrucial improvements over previous implementations. First, we utilize moredirect measurements of the optical absorption of the suspended samples understudy and find values ~40% lower than previously assumed. Second, by comparingthe response of fully supported and suspended samples using different laserspot sizes, we are able to independently measure the interfacial thermalconductance to the substrate and the lateral thermal conductivity of thesupported and suspended materials. The approach is validated by examining theresponse of a suspended film illuminated in different radial positions. For 1LMoS2 and MoSe2, the room-temperature thermal conductivities are (84+/-17) W/mKand (59+/-18) W/mK, respectively. For 2L MoS2 and MoSe2, we obtain values of(77+/-25) W/mK and (42+/-13) W/mK. Crucially, the interfacial thermalconductance is found to be of order 0.1-1 MW/m2K, substantially smaller thanpreviously assumed, a finding that has important implications for design andmodeling of electronic devices.

Measurement of lateral and interfacial thermal conductivity of single- and bi-layer MoS2 and MoSe2 using refined optothermal Raman technique