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Spontaneous formation of geometric patterns is a fascinating, ubiquitousprocess that provides fundamental insights into the roles of symmetry breaking,anisotropy and nonlinear interactions in emergent phenomena. Here we reportdynamic, highly ordered topographic patterns on the surface of diamond thatspan multiple length scales and have a symmetry controlled by the chemicalspecies of a precursor gas used in electron beam induced etching (EBIE). Thisbehavior reveals an underlying etch rate anisotropy and an electron energytransfer pathway that has been overlooked by existing EBIE theory. We presentan etch rate kinetics model that fully explains our results and is universallyapplicable to EBIE. Our findings can be exploited for controlled wetting,optical structuring and other emerging applications that require nano andmicro-scale surface texturing.

Emergent formation of dynamic topographic patterns in electron beam induced etching