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Electron-beam (e-beam) lithography is widely employed in fabrication of 2-Dpatterns and 3-D structures. A certain type or shape of the sidewall in theremaining resist profile may be desired in an application, e.g., an undercutfor lift-off and a vertical sidewall for etching, or required for a device.Also, as the feature size is decreased well below a micron, a small variationof the sidewall slope can lead to a significant (relative) CD error in certainlayers of resist. Therefore, it is important to understand effects of spatialdose distribution on sidewall shape and be able to achieve the desired shape.In this study, via simulation, the relationship among the total dose, spatialdistribution of dose, developing time and sidewall shape, and performance ofthe method developed to optimize the dose distribution for a target sidewallshape have been analyzed. The simulation results have been verified throughexperiments.

Optimization of Spatial Dose Distribution for Controlling Sidewall Shape in Electron-beam Lithography