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Here, we report the observation of a hitherto unreported optoelectroniceffect, namely a light-induced diode-like response in multi-layered MoSe$_2$field-effect transistors whose sense of current rectification is controllablethrough a gate voltage. We argue, through numerical simulations, that thisbehavior results from the difference in the size of the Schottky barriersbetween drain and source metal contacts. Each barrier can be modeled as aSchottky diode but with opposite senses of current rectification between them,with the diode response resulting from the light induced promotion ofphoto-generated carriers across the smaller barrier. The back gate voltagecontrols the sense of current rectification by modulating the relativeamplitude between them. This effect, which gives rise to a novel type ofoptoelectronic switch, also yields a photovoltaic response. Hence, it couldprovide an alternative to PN-junctions when harvesting photovoltaic currentsfrom transition metal dichalcogenides. We argue that the photovoltaicefficiency associated to this effect could be increased by just increasing therelative asymmetry between both Schottky barriers. We also suggest that thisnew electro-optical effect has potential for technological applications.

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe$_2$ field-effect transistors