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The evolution of surface morphology during the growth of N-polar (000-1) GaNunder N-rich condition is studied by kinetic Monte Carlo (kMC) simulations fortwo substrates miscuts 2deg and 4deg. The results are compared withexperimentally observed surface morphologies of (000-1) GaN layers grown byplasma-assisted molecular beam epitaxy. The proposed kMC two-component model ofGaN(000-1) surface where both types of atoms: nitrogen and gallium attach thesurface and diffuse independently, explains that at relatively high rates ofthe step flow (miscut angle <2deg) the low diffusion of gallium adatoms causessurface instabilities and leads to experimentally observed roughening while forlow rates of the step flow (miscut 4deg), smooth surface can be obtained. Inthe presence of almost immobile nitrogen atoms under N-rich conditions, thegrowth is realized by the process of two-dimensional island nucleation andcoalescence. Additionally, we show that higher crystal miscut, lower crystalgrowth rate or higher temperature results in similar effect of the smootheningof the surface. We show that the surface also smoothens for the growthconditions with very high N-excess. The presence of large number of nitrogenatoms changes locally mobility of gallium atoms thus providing easiercoalescence of separated island.

Miscut dependent surface evolution in the process of N-polar GaN$(000\bar 1)$ growth under N-rich condition