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We report epitaxial growth and characterization of GaN thin films on sapphire(0001) substrates using low temperature GaN intermediate layer by plasmaassisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaNthin films were studied by high- resolution X-ray diffraction (HRXRD), atomicforce microscopy (AFM), Hall Effect and photoluminescence (PL). It has beenfound that there is a significant improvement in the quality of the GaN filmsafter annealing at 725 \degree C in terms of electron mobility, full width athalf maximum (FWHM) of omega ({\omega}) scan around (0002) XRD peak of GaNfilms. Screw dislocation density obtained from the FWHM of GaN (0002) \omegascan and etch pitch density calculated from AFM image are 6.4 \times 10^8cm^{-2} and 5.1\times 10^8 cm^{-2} respectively. In PL measurement, FWHM ofnear band edge (NBE) peak of GaN films has been found to be 30 meV.

Impact of annealing temperature on structural, electrical and optical properties of epitaxial GaN thin films grown on sapphire substrates by PA-MBE