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In a continuous search for the energy-efficient electronic switches, a greatattention is focused on tunnel field-effect transistors (TFETs) demonstratingan abrupt dependence of the source-drain current on the gate voltage. Among allTFETs, those based on one-dimensional (1D) semiconductors exhibit the steepestcurrent switching due to the singular density of states near the band edges,though the current in 1D structures is pretty low. In this paper, we propose aTFET based on 2D graphene bilayer which demonstrates a record steepsubthreshold slope enabled by van Hove singularities in the density of statesnear the edges of conduction and valence bands. Our simulations show theaccessibility of 3.5 x 10$^4$ ON/OFF current ratio with 150 mV gate voltageswing, and a maximum subthreshold slope of (20 {\mu}V/dec)$^{-1}$ just abovethe threshold. The high ON-state current of 0.8 mA/{\mu}m is enabled by anarrow (~ 0.3 eV) extrinsic band gap, while the smallness of the leakagecurrent is due to an all-electrical doping of the source and drain contactswhich suppresses the band-tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities