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High-kinetic energy impacts between inorganic surfaces and molecular beamsseeded by organics represent a fundamental case study in materials science,most notably when they activate chemical-physical processes leading tonanocrystals growth. Here we demonstrate single-layer graphene synthesis oncopper by C60 supersonic molecular beam (SuMBE) epitaxy at 645 {\deg}C, withthe possibility of further reduction. Using a variety of electron spectroscopyand microscopy techniques, and first-principles simulations, we describe thechemical-physical mechanisms activated by SuMBE resulting in graphene growth.In particular, we find a crucial role of high-kinetic energy deposition inenhancing the organic/inorganic interface interaction, to control the cageopenings and to improve the growing film quality. These results, whilediscussed in the specific case of graphene on copper, are potentiallyextendable to different metallic or semiconductor substrates and where lowerprocessing temperature is desirable.

Towards room-temperature single-layer graphene synthesis by C60 Supersonic Molecular Beam Epitaxy