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We proposed a new high resolution single photon infrared spectrometer forsearch for radiative decay of cosmic neutrino background(C$\nu$B). Thesuperconducting-tunnel-junctions(STJs) are used as a single photoncountingdevice. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nblayers and their thicknesses are optimized for the operation temperature at 370mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leakcurrent 250 pA and the measured data implies that a smaller area STJ fulfillsour requirement. FD-SOI MOSFETs are employed to amplify the STJ signal currentin order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operatedat cryogenic temperature of 370 mK, which reduces the noise of the signalamplification system. FD-SOI MOSFET characteristics are measured at cryogenictemperature. The Id-Vgs curve shows a sharper turn on with a higher thresholdvoltage and the Id-Vds curve shows a non linear shape in linear region atcryogenic temperature. Taking into account these effects, FD-SOI MOSFETs areavailable for read-out circuit of STJ detectors. The bias voltage for STJdetectors are 0.4 mV and it must be well stabilized to deliver highperformance. We proposed an FD-SOI MOSFET based charge integrated amplifierdesign as a read-out circuit of STJ detectors. The requirements for anoperational amplifier used in the amplifier is estimated using SPICEsimulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) andit must have low power dissipation as compared to the cooling power ofrefrigerator.

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors