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Electronic properties of graphene oxides enriched by the strong chemicalbondings are investigated using first-principle calculations. They are verysensitive to the changes in the number of graphene layer, stackingconfiguration, and distribution of oxygen. The feature-rich electronicstructures exhibit the destruction or distortion of Dirac cone, opening of bandgap, anisotropic energy dispersions, O- and (C,O)-dominated energy dispersions,and extra critical points. All the few-layer graphene oxides are semi-metalsexcept for the semiconducting monolayer ones. For the former, the distortedDirac-cone structures and the O-dominated energy bands near the Fermi level arerevealed simultaneously. The orbital-projected density of states (DOS) havemany special structures mainly coming from a composite energy band, theparabolic and partially flat ones. The DOS and spatial charge distributionsclearly indicate the critical bondings in O-O, C-O and C-C bonds, beingresponsible for the diversified properties.

Chemical Bondings Induced Rich Electronic Properties of Oxygen Absorbed Few-layer Graphenes