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We have developed CMOS imaging sensor (XRPIX) using SOI(Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-RaysoiPIXel) has advantage of a high time resolution, a high position resolutionand an observation in a wide X-ray energy band with a thick depletion layer ofover 200um.  However, the energy resolution of XRPIX is not as good as one of X-ray CCD.Therefore improvement of the the energy resolution is one of the most importantdevelopment item of XRPIX. In order to evaluate the performance XRPIX moreprecisely, we have investigated on the temperature dependence of the basicperformance, such as readout noise, leak current, gain and energy resolution,using two type of XRPIX, XRPIX1 and XRPIX2b_CZ.  In our study, we confirmed the readout noise, the leak current noise and theenergy resolution clearly depended on the operating temperature of XRPIX. Inaddition, we divided the readout noise into the leak current noise and thecircuit origin noise. As a result, we found that noise of the electroniccircuitry origin was proportional to the square root of operating temperature.

Study of the basic performance of the XRPIX for the future astronomical X-ray satellite