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We have investigated the effect of electric field control on themagnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathinfilm (~10 nm) by using it as the semiconductor channel material of aprototypical field effect device and SiO2 as dielectric gate. A largeelectroresistance (ER) of ~78% at Vg = -8 V is found in LCMO at 200 K. Thedirect magnetization measurements confirm the formation of a largeferromagnetic phase with the increase in the applied gate voltage at 200 K.

Electric field controlled magnetization and transport properties of La0.7Ca0.3MnO3 ultrathin film