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The equivalent circuit simulation of random resistors-capacitors (R-C) net,modified to include large capacitors interfacing between the random R-C bulkand the electrode surface, shows an enhancement of 3 orders of magnitude of theapparent real dielectric constant at low frequencies upon an introduction ofresistors percolating paths in the bulk. The appearance of the bulkR-percolating paths can represent the photo-generated high conductivity stateof semiconductors bulk, an effect supported by the experimental observationthat, in parallel with the photo-enhancement of the real dielectric constant,its imaginary part is strongly enhanced as well. The addition of thephoto-generated charge carriers strongly enhances bulks electricalconductivity, effectively confining the space charge region to the interfacebetween bulks edge and the electrode. That could be a simple phenomenologicalexplanation for the apparent dielectric constant enhancement upon illuminationin photocells, not involving elaborate physical models.

Large, light-induced capacitance enhancement in semiconductor junctions simulated by capacitor-resistor nets