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AlN thin films have been grown on Si (100) substrates by reactive ion beamsputter deposition (IBSD) at different substrate temperatures varying from roomtemperature (RT) to 500oC. Substrate temperature induced microstructuraltransition from amorphous at RT, nanocrystalline at 300oC to microcrystallineat 400oC has been observed by Transmission Electron Microscopy (TEM). Averagesurface roughness (Ra) and morphology has been explored by using Atomic ForceMicroscopy (AFM). UV-VIS spectrophotometry has been employed to probe thesubstrate temperature induced changes in optical band-gap (Eg) of grown thinfilms in reflectance mode. It was found that Eg was increased from 5.08 to 5.21eV as substrate temperature was increased from RT to 500oC. Urbach energy tail(Eu) along with weak absorption tail (WAT) energy (Et) have been estimated toaccount for the optical disorder which was found to decrease with associatedincrease in Eg.

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures